An IGBT datasheet (https://www.infineon.com/dgdl/Infineon-IGB30N60H3-DS-v02_03-en.pdf?fileId=db3a30432a40a650012a46d3374d2b96) states that the minimum collector-emitter breakdown voltage V(BR)CES is 600 V at 2 mA collector current IC and 0 V gate-emitter voltage VGE. I thought this meant when the collector-emitter voltage VCE reaches 600 V, the leakage current reaches 2 mA and 600 V is the lowest value due to manufacturing variation. But then it states that the maximum gate-emitter leakage current ICES is 40 μA at VCE = 600 V and VGE = 0 V, and interpreting this along the same lines as above — the leakage current reaches 40 μA when VCE reaches 600 V — then leads to a contradiction. So what do the minimum and maximum values together with the conditions with which they're specified actually mean?
